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C6-DBTDT organic field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrichlorosilane moiety

trichloro(octadecyl)silane moiety octadecyltrimethoxysilane moiety octadecyl trichlorosilane moiety octadecyltrichlorosilane moiety n-octadecylsilanetriyl moiety octadecylsilanetriyl residue octadecylsilanetriyl group n-octadecylsilane moiety octadecylsilyl fragment octadecylsilane moiety octadecylsilyl moiety CH3-(CH2)17-Si- octadecylsilane octadecylsilyl ODTS moiety OTS residue OTS moiety ODS moiety OS moiety
Type
Formula -C18H37Si-
Role
4

C6-DBTDT nanoribbons

Type
Formula
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • C6-DBTDT
  • OTS-coated Si/SiO2 substrate
  1. 2HPMfmMaqG5GW
Product

C6-DBTDT organic field-effect transistor

Size: not specified

Medium/Support: none

References

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