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single-crystalline donor-acceptor heterojunction-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role bottom gate
2

highly doped silicon

Type Complex Compound
Formula
Role substrate
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
4

divinyltetramethyldisiloxane bis(benzocyclobutene) monomer

divinyltetramethyldisiloxane bis(benzocyclobutene) divinyltetramethyldisiloxane-bis(benzocyclobutene) divinyl-tetramethylsiloxane-bis(benzocyclobutene) divinylsiloxane-bis-benzocyclobutene divinylsiloxane-bisbenzocyclobutene BCB 3022-46 BCB monomer BCB
Type
Formula C24H30OSi2
Role
5

fullerene C60 ribbons

Type Nano Material
Formula
Role single-crystalline heterojunction layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on operation mode

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • silicon/silica
  1. 4eBthF4UyNVidiWFrOCgR
Product

single-crystalline donor-acceptor heterojunction-based field-effect transistor

Size: not specified

Medium/Support: none

References

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