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graphene dynamic synaptic device

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped p-type silicon

B-doped p-type Si B-doped Si
Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

Bernal stacked bilayer graphene

artificially stacked graphene two-layer stacked graphene stacked bilayer graphene two-layer graphene stack double layer graphene double-layer graphene 2L stacked graphene graphene electrode two layer graphene bi-layer graphene 2L graphene stack bilayer graphene graphene AB-BLG 2-LG BLG
Type
Formula
Role
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role dielectric layer
5

Au/Cr

Type Nano Material
Formula
Role source
6

Au/Cr

Type Nano Material
Formula
Role drain
7

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. wNXNecvorkSI0
Product

graphene dynamic synaptic device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. SiTlPEnaSbE7G
Product

graphene dynamic synaptic device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. RsiKJqondvMnm
Product

graphene dynamic synaptic device

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. Y1j1ghJX9UGN3
Product

graphene dynamic synaptic device

Size: not specified

Medium/Support: none

References

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