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non-volatile resistive switching memory device

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role electrodes
2

poly(3-hexylthiophene)/Au@air@h-TiO2 yolk-shell nanosphere composite film

P3HT/Au@air@h-TiO2 yolk-shell nanosphere composite film
Type Nano Material
Formula
Role electroactive layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on sweep number

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. 9DWOE
  2. Dw1mAdEMjdlAmPj
Product

non-volatile resistive switching memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. uS7XY
  2. yqC7FL9oYYNUjd0
Product

non-volatile resistive switching memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. pomL9
  2. xEYO1rKsVt7PQfa
Product

non-volatile resistive switching memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. ryAxw
  2. PATh1sRevfU9g9s
Product

non-volatile resistive switching memory device

Size: not specified

Medium/Support: none

References

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