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metal-oxide semiconductor inverter fabricated with p-MoSe2 and n-MoSe2 FET

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

exfoliated p-MoSe2 flakes

thin layers of p-MoSe2 few-layered p-MoSe2 exfoliated p-MoSe2 p-MoSe2 crystals Nb-doped MoSe2 p-MoSe2 flakes p-MoSe2
Type Nano Material
Formula
Role channel layer
4

thin layers of n-MoSe2

few-layered n-MoSe2 n-MoSe2 crystals n-MoSe2 flakes n-MoSe2
Type Nano Material
Formula
Role channel layer
5

chromium/gold

Type Complex Compound
Formula
Role source
6

chromium/gold

Type Complex Compound
Formula
Role drain
7

chromium/gold

Type Complex Compound
Formula
Role source
8

chromium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
gain value

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
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Product

metal-oxide semiconductor inverter fabricated with p-MoSe2 and n-MoSe2 FET

Size: not specified

Medium/Support: none

References

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