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random-network single walled carbon nanotubes field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

shear-aligned single walled carbon nanotubes

shear-aligned SWCNT
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. eJOGOS8o0bTmmgTBKMXYM
  2. wfCce
  3. pxDm
Product

random-network single walled carbon nanotubes field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. jr9tap6kcvbGgYXzCPJEp
Product

random-network single walled carbon nanotubes field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. dIVjfandzOgHDZJ1iWFdC
Product

random-network single walled carbon nanotubes field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. rndcJYovMocsiq0Gq3AS7
  2. hEMah
  3. 4Jn0
Product

random-network single walled carbon nanotubes field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. lcs8kzarRqP2YsNw6v80U
Product

random-network single walled carbon nanotubes field-effect transistor

Size: not specified

Medium/Support: none

References

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