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molybdenum disulfide field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

molybdenum disulfide nanosheet

MoS2 NS
Type
Formula
Role
4

reduced graphite nanoplatelets

multi-layered graphene multilayered graphene few-layered graphene multi-layer graphene exfoliated graphite multilayer graphene graphene-based film few-layer graphene few layer graphene stacked graphene graphene flake graphene MLG FLG GBF FG
Type Nano Material
Formula
Role source
5

reduced graphite nanoplatelets

multi-layered graphene multilayered graphene few-layered graphene multi-layer graphene exfoliated graphite multilayer graphene graphene-based film few-layer graphene few layer graphene stacked graphene graphene flake graphene MLG FLG GBF FG
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. HEj9oDBA9WB3vTG1KegYWHPsBkSDZPX1k
Product

molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. GwtZ8qakrCf7VPDj6dHmAZnuKmuCZKrFG
Product

molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. I6z6ZN9KK4s6Zi9tXXBbPPhHnKYGbBECD
Product

molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. Ro936tUcFl4Q32KqvWsi5shMx3KHWPNaK
Product

molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. TrcU59DddzTuzShB5XS0eRvJmh6J1dPRS
Product

molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

References

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