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field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-type doped silicon

p++-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

1-dodecanethiol/oleylamine-capped CISeS quantum dots

OLA/DDT-capped CISeS QD
Type Nano Material
Formula
Role semiconductor layer
4

indium

Type Single Compound
Formula In
Role source
5

indium

Type Single Compound
Formula In
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
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  2. qj5V3uu6T2
Product

field effect transistor

Size: not specified

Medium/Support: none

References

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