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pentacene-based OFET memory device with N-C60 single floating-gate

Based on

1 Articles
2015 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

3-aminopropyl-triethoxysilane-modified HfO2

APTES-modified HfO2
Type Complex Compound
Formula
Role gate dielectrics
4

needle-shaped C60 single crystals, aspect ratio 7

single-crystal fullerene needles single-crystal C60 needles C60 single-crystal needles N-C60-7
Type Nano Material
Formula
Role chargeable layer
5

octadecyltrichlorosilane-modified 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-crosslinked poly(4-vinylphenol)

ODTS-modified HDA-crosslinked PVP ODTS-modified c-PVP
Type Complex Compound
Formula
Role tunneling layer
6

pentacene

PEN Pen P5 Pc Pe
Type Single Compound
Formula C22H14
Role semiconducting channel
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage pulse

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium(IV) oxide
  • indium tin oxide glass
Product

pentacene-based OFET memory device with N-C60 single floating-gate

Size: not specified

Medium/Support: none

References

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