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BN-BP-BN heterostructure Hall-bar device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

boron nitride

Type
Formula BN
Role
4

monolayer black phosphorus nanosheets

single-layer black phosphorus black phosphorous nanosheets black phosphorus nanosheets monolayer black phosphorus black phosphorus monolayer one-layer black phosphorus single-layered phosphorene single-layer phosphorenes single-layer phosphorene monolayer phosphorene black phosphorene single-layer BP BP nanosheets monolayer BP 2D-phosphane BP monolayer phosphorene BP sheets SLP
Type
Formula
Role
5

boron nitride

Type
Formula BN
Role
6

chromium

Type Single Compound
Formula Cr
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
  • boron nitride
Product

BN-BP-BN heterostructure Hall-bar device

Size: not specified

Medium/Support: none

References

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