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ZrOx dielectric-based CdSe field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

substoichiometric zirconium oxide

zirconium oxide zirconia ZrOx
Type Single Compound
Formula ZrO(x)
Role gate dielectrics
3

nanocrystalline CdSe film

Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
areal capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(2,4-pentanedionato)zirconium(IV)
  1. KD2by4oxku9y
  2. 7R93xCENDGSZ
  3. nkucit5sDaqslg7Wtp7Ke6Rgp4JBT
  4. BjHyyTV
Product

ZrOx dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(2,4-pentanedionato)zirconium(IV)
  1. Il21xGEru75J
  2. 1fZQy2EOZcuX
  3. 9xXRnE4fY6LPWlGz80s9XZgdoP8RB
  4. rPw89b2
Product

ZrOx dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(2,4-pentanedionato)zirconium(IV)
  1. MHqUGrhLy0J9
  2. FgPfhIWlTUzu
  3. 5JsEBheVWpjo99FKjLLNomH0bAXXl
  4. C6sVqVj
Product

ZrOx dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

References

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