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field-effect transistor based on decamethylcobaltocene-doped GNR on SiNx gate insulator

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped silicon

Type Complex Compound
Formula
Role gate
2

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role gate dielectrics
3

decamethylcobaltocene-doped graphene nanoribbons

DMC-doped GNR
Type Nano Material
Formula
Role channels
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Dirac voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. 8E260pnGt78Ae3gSZf
  2. GyAjYq1x4yFeRCQOVke3QK4
  3. xJ4Qn2M
Product

field-effect transistor based on decamethylcobaltocene-doped GNR on SiNx gate insulator

Size: not specified

Medium/Support: none

References

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