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CoFe2O4 NP-based nano-floating gate memory device

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS TMOS OTMS ODTS ODMS TMS ODS OTS
Type Single Compound
Formula CH3(CH2)17Si(OCH3)3
Role layer
4

cobalt ferrite nanoparticles

CoFe2O4 nanoparticles
Type Nano Material
Formula
Role charge trap site
5

pentacene

Type Single Compound
Formula C22H14
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. MhJfoYoxRY7mZA7CQxDkPl83jIk4dciDhGOuEqPlygKWyWOX12rX0iFYxJPo0vDTU
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. Fba0hfYiBXGkNHiyL5Ftsk9M3PNslP7PRlu3oYIF7mNO26qqojPxSDFUVPWiXFoqE
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. U6esPTDLQ2xyXRG5FsG3OZ1H9O7Dfo75horFjXsNavD40oz3oWewj99GsFIqDilNn
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

References

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