Loading ...

Al2O3 dielectric-based CdSe field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

nanocrystalline CdSe film

Type Nano Material
Formula
Role channels
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • titanium
  1. 2Elsd8XlzEo
Product

Al2O3 dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial