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surrounding-gate transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-type germanium

n-Ge
Type Complex Compound
Formula
Role substrate
2

nickel-germanium alloy

Type
Formula
Role
3

nickel-gold multilayer

Type Complex Compound
Formula
Role source
4

silicon-rich nitride

silicon mononitride silicon nitride
Type Single Compound
Formula SiN
Role mask
5

Si-doped indium arsenide nanowires

n-type InAs NW
Type Nano Material
Formula
Role channels
6

aluminium hafnium oxide

Type Single Compound
Formula Hf0.8Al0.2O
Role gate oxide
7

tungsten

Type Single Compound
Formula W
Role gate
8

titanium-palladium-gold multilayer

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
  1. gMrrJcJcR8bLjCchx
Product

surrounding-gate transistor

Size: not specified

Medium/Support: none

References

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