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SiO2 dielectric-based CdSe field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

nanocrystalline CdSe film

Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
areal capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. lDW8Dv9m6HRYSkxz1e
  2. kuBdLtYBvBRIiQIdvj3kOaryQrTA8
Product

SiO2 dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. a6e4RiQRHSs2YTKdZy
  2. 3S4uGHbjOlJgq6Nm8p3TzSCTwlGs7
Product

SiO2 dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. YiqMVX1ldaVuNIeK2f
  2. ah6Ot0fUyY8swHOkPQbkQ1POy8Pxn
Product

SiO2 dielectric-based CdSe field effect transistor

Size: not specified

Medium/Support: none

References

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