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DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily n-doped Si

N++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type Single Compound
Formula C18H37SiCl3
Role adhesion layer
6

DPP-C3/DPP-C0 complementary semiconducting polymer blend film

DPP-C3/DPP-C0 c-SPB film
Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • heavily n-doped Si wafer with SiO2 surface layer
Product

DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gold
  • heavily n-doped Si wafer with SiO2 surface layer
Product

DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gold
  • heavily n-doped Si wafer with SiO2 surface layer
Product

DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gold
  • heavily n-doped Si wafer with SiO2 surface layer
Product

DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gold
  • heavily n-doped Si wafer with SiO2 surface layer
Product

DPP-C20/DPP-C0 complementary semiconducting polymer blend-based bottom-gate bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

References

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