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three monolayered molybdenum ditelluride field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

highly-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bilayer molybdenum(IV) telluride

bilayered molybdenum ditelluride bilayered MoTe2 nanosheets molybdenum ditelluride bilayer MoTe2
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
Product

three monolayered molybdenum ditelluride field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
Product

three monolayered molybdenum ditelluride field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
Product

three monolayered molybdenum ditelluride field-effect transistor

Size: not specified

Medium/Support: none

References

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