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PDPP-4FTVT-based thin film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS TMS ODS OTS
Type
Formula C21H46O3Si
Role
4

poly[2,5-bis(2-decyltetradecyl)pyrrolo[3,4-c]pyrrole-1,4(2H, 5H)-dione-alt-5,5'-di(thiophen-2-yl)-2,2'-(E)-1,2-bis(3,4-difluorothien-2-yl)ethene]

PDPP-4FTVT
Type Polymer
Formula
Role channel layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • Si wafer
Product

PDPP-4FTVT-based thin film transistor

Size: not specified

Medium/Support: none

References

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