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InGaN light emitting diode

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role buffer layer
3

aluminium gallium nitride

AlGaN
Type
Formula
Role
4

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role n-type semiconductor layer
5

indium gallium nitride quantum wells

InGaN quantum wells InGaN QW
Type Nano Material
Formula
Role emission layer
6

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role p-type semiconducting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
internal electric field profile

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
cathodoluminescence spectroscopy

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References

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