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CH3NH3PbI3-based phototransistor with the bottom-gate bottom-contact structure

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

CH3NH3PbI3 thin film

perovskite thin film
Type Nano Material
Formula
Role semiconducting channel
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role protective layer
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on as-fabricated or after storing for 60 days

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

CH3NH3PbI3-based phototransistor with the bottom-gate bottom-contact structure

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • lead(II) iodide
  • Si/SiO2
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Product

CH3NH3PbI3-based phototransistor with the bottom-gate bottom-contact structure

Size: not specified

Medium/Support: none

References

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