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ferroelectric-gate field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role gate electrode
2

0.65PbMg0.33Nb0.67O3-0.35PbTiO3

PMN-PT
Type Complex Compound
Formula
Role ferroelectric insulator
3

pentacene

PEN Pen P5 Pc Pe
Type
Formula C22H14
Role
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • 0.65PbMg0.33Nb0.67O3-0.35PbTiO3
  1. LWHcNBBQ
Product

ferroelectric-gate field effect transistor

Size: not specified

Medium/Support: none

References

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