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quasi-ballistic three-dimensional 3D topological insulator nanowire device

Based on

1 Articles
2015 Most recent source

Composition

1

phosphorus-doped amorphous silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

topological insulator nanowires

Bi1.33Sb0.67Se3 nanowires TI nanowires
Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role electrodes
6

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane tetrafluorotetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type
Formula C12F4N4
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
differential conductance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • bismuth tin selenide
  • Si/SiO2 substrate
  1. puw3SP
Product

quasi-ballistic three-dimensional 3D topological insulator nanowire device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • bismuth tin selenide
  • Si/SiO2 substrate
  1. 5MoWIp
Product

quasi-ballistic three-dimensional 3D topological insulator nanowire device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • bismuth tin selenide
  • Si/SiO2 substrate
  1. esm8Oj
Product

quasi-ballistic three-dimensional 3D topological insulator nanowire device

Size: not specified

Medium/Support: none

References

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