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oxide nanowire field-effect transistor

Based on

3 Articles
2015 Most recent source

Composition

1

n-Si

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets bilayer graphene supercell multilayer graphene sheets bilayer graphene sheets double-layered graphene bilayer graphene film double layer graphene double-layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers 2-layer graphene bilayer graphene graphene bilayer graphene sheets graphene flakes 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr 2LG BLG DLG GF BG
Type
Formula
Role
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel resistance dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for adenine

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • black phosphorus
  1. GmYYMg3AYoX
Product

oxide nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. lcvhFRB1LRVJvMm8iNTHtP7
  2. PLvfKFqantwcY
Product

oxide nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. xCk14OzHEPVwS8aiBlbYMNO
  2. KH7uZVaGVk1QH
Product

oxide nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

oxide nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

oxide nanowire field-effect transistor

Size: not specified

Medium/Support: none

References

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