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GaPZnS nanowire photodetector

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role
5

GaP-ZnS pseudobinary alloy nanowires

(GaP)0.9(ZnS)0.1 NW GaPZnS nanowires
Type
Formula
Role
6

platinum

Type Single Compound
Formula Pt
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on light on-off cycle

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • titanium
  • Si/SiO2
  1. pPu2C9tPYuIwwE
  2. XY1zzN97qG
Product

GaPZnS nanowire photodetector

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • titanium
  1. jEfh1MrrDiPrXX
  2. Skqm6SfSUY
Product

GaPZnS nanowire photodetector

Size: not specified

Medium/Support: none

References

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