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benzyl viologen-doped back-gated MoS2 field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped Si/SiO2

Type Complex Compound
Formula
Role gate
2

Ni/Au electrode

Ni/Au film Au/Ni
Type Nano Material
Formula
Role source
3

Ni/Au electrode

Ni/Au film Au/Ni
Type Nano Material
Formula
Role drain
4

benzyl viologen-doped MoS2 flakes

BV-doped MoS2 flakes
Type Nano Material
Formula
Role active layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. fjeLYCiG32N60tJOlOgDMy
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. zr2cmeUpN12hnqPpuLoWSW
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. 2pKVdVn6uFpwtM6OQwFdo5
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. taoLw0VliexLS0AQf7pXAx
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. 40N2aojolSe00Cx9fIJUs0
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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