Loading ...

Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

Based on

1 Articles
2015 Most recent source

Composition

1

p+-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene film

Ph-BTBT-10 film
Type Nano Material
Formula
Role channels
6

2,3,4,5,6-pentafluorothiophenol

pentafluorobenzene-1-thiol pentafluorobenzenethiol pentafluorothiophenol perfluorothiophenol HS-PhF5 PFBT
Type Single Compound
Formula C6HF5S
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • SiO2/p+-Si
Product

Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gold
  • SiO2/p+-Si
Product

Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial