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dual-gated bilayer field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

doped silicon

Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

Cr/Au electrode

Type Nano Material
Formula
Role source electrode
4

bilayer graphene domain wall

Type Nano Material
Formula
Role channels
5

Cr/Au electrode

Type Nano Material
Formula
Role drain electrode
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
7

gold

Type Single Compound
Formula Au
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge neutral point resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

dual-gated bilayer field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

dual-gated bilayer field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

dual-gated bilayer field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

dual-gated bilayer field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

dual-gated bilayer field-effect transistor

Size: not specified

Medium/Support: none

References

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