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InAs NW based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/silica

Type Complex Compound
Formula
Role substrate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer
3

InAs NW grown on (111)B InAs substrate

InAs nanowires InAs NW
Type Nano Material
Formula
Role channel layer
4

nickel/gold

Type Complex Compound
Formula
Role source
5

nickel/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conduction sub-band energy dependent on sub-band number

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • silicon nitride
  1. GqvfF258ChAdXBa98DDsl5UdtquEQC5YxXQNNaB1ZUZ8KSHus5jABPd3QIEYomgRutlmaNvn63yi1jMc
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • silicon nitride
  1. G0FrPVN4pZly9ZpjxHhglRXDdc6UcQDTTf6203Ck6XuNEBnGOks1AKYibgZxpW8uJJjxzTRZGaYhdeaC
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

References

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