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phosphorene-based field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

4-layer phosphorene

Type Nano Material
Formula
Role channels
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • black phosphorus
  • Si/SiO2
Product

phosphorene-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • black phosphorus
Product

phosphorene-based field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • black phosphorus
Product

phosphorene-based field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • black phosphorus
  • Si/SiO2
Product

phosphorene-based field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • black phosphorus
Product

phosphorene-based field effect transistor

Size: not specified

Medium/Support: none

References

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