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topological insulator bismuth antimony telluride thin film

Based on

1 Articles
2015 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

bismuth antimony telluride

(Bi0.16Sb0.84)2Te3
Type
Formula
Role
3

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
4

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role electrodes
5

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical conductivity dependent on magnetic field

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Applications

Area Application Nanomaterial Variant Source
insulation

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • indium(III) phosphide
See all (4)
Product

topological insulator bismuth antimony telluride thin film

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • indium(III) phosphide
See all (4)
Product

topological insulator bismuth antimony telluride thin film

Size: not specified

Medium/Support: none

References

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