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p-n molybdenum disulfide field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

p-n-doped molybdenum disulfide nanosheet

p-n-MoS2 nanosheet
Type
Formula
Role
4

chromium/palladium/chromium film

Cr/Pd/Cr film
Type Nano Material
Formula
Role source
5

chromium/palladium/chromium film

Cr/Pd film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. Db37ZOfjcV5FJrJIEiGqp
Product

p-n molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. T1vR94Luj0Gthyc5dw1Jb
Product

p-n molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

References

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