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N-doped graphene-based device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)

cross-linked BCB
Type
Formula
Role
4

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

2-(2-methoxyphenyl)-1,3-dimethyl-1H-1,3-benzodiazol-3-ium iodide

2-(2-methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide o-MeO-DMBI-I- o-MeO-DMBI-I
Type
Formula C16H17IN2O
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
photonics

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Preparation

Method 1

Type: Physical formation
Source:
  1. GzgE
Product

N-doped graphene-based device

Size: not specified

Medium/Support: none

References

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