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Pt/AlOy/HfOx/TiN based 3D vertical resistive switching device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

platinum

Type Single Compound
Formula Pt
Role plane electrode
3

titanium nitride

Type Single Compound
Formula TiN
Role pillar electrode
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role switching oxide
5

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role switching oxide

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
series resistance dependent on resistance state

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Applications

Area Application Nanomaterial Variant Source
electronics

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References

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