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field effect transistor based on ReS2 nanosheet

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layered ReS2 nanosheet

few-layered ReS2 NS
Type Nano Material
Formula
Role channels
4

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role source
5

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conduction

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p-doped silicon
  • sulphur
  • rhenium(VI) oxide
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  2. rUWfqUk1SHTa5uT6dOHOjLuWdJPTo3hgEbsQmWMKvu0RkAE40ETHHJwVqbFrtap4mS7ZSFp
  3. HnDIbv
Product

field effect transistor based on ReS2 nanosheet

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p-doped silicon
  • sulphur
  • rhenium(VI) oxide
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  2. jq3ZfmlWm2ho9Ebyi8WKGA9fnbK69l5bi0NFJV4et7PsLI36Ov0tDXYSbwBmwifiUWG0Xlj
  3. I40LDS
Product

field effect transistor based on ReS2 nanosheet

Size: not specified

Medium/Support: none

References

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