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perovskite/C60-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

methylammonium lead iodide perovskite

methylammonium triiodoplumbate(II) methylammonium lead(II) iodide methylammonium lead triiodide methylammonium lead iodide MAPI
Type
Formula CH6I3NPb
Role
4

example of optionally substituted fullerene

polycrystalline fullerite C60 C60 fullerene particles fullerene nanoparticles (C60-Ih)[5,6]fullerene (C60-Ih)[5,6]fullerene buckminsterfullerene example of fullerene fullerene-C60 anion fullerene molecule C60 nanoparticles fullerene layer C60 fullerenes C60 buckyballs C60 fullerenes C60 fullerene fullerene-C60 [60]fullerene C60 fullerene C60-fullerene Ceo fullerene fullerene C60 fullerene C60 fullerene-C60 fullerene[60] C60 molecule C60 molecule fullerenes C60 peapod fullerene buckyball C60 anion C60- C60 C60
Type
Formula
Role
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2 substrate
  • methylammonium lead iodide perovskite
  1. kwIvj8YnkO79RPy
  2. jPtm
  3. G9ggjBB8KTdsCZEDXtN
Product

perovskite/C60-based field-effect transistor

Size: not specified

Medium/Support: none

References

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