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Gr/Al0.25Ga0.75N/GaN heterostructure

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
3

aluminium gallium nitride film

Al0.25Ga0.75N film AlGaN film
Type Nano Material
Formula
Role semiconductor layer
4

graphene

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
See all (4)
  1. cFf1vbDjCMhdzTwSSRzWHBvIjrPjQvDxyk5RES
Product

Gr/Al0.25Ga0.75N/GaN heterostructure

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. 6uxGJNGznDgkYkhd3Fwb
  2. s5cS
Product

Gr/Al0.25Ga0.75N/GaN heterostructure

Size: not specified

Medium/Support: none

References

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