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organic thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

heavily doped silicon

Type Complex Compound
Formula
Role gate
2

octadecyltrichlorosilane-modified SiO2

OTS-modified SiO2
Type Complex Compound
Formula
Role gate dielectrics
3

2,2'-((6E,6'E)-6,6'-(5-(2-ethylhexyl)-4,6-dioxo-5,6-dihydro-1H-thieno[3,4-c]pyrrole-1,3(4H)-diylidene)bis(2-hexylthieno[3,4-b]thiophene-6,4(6H)-diylidene))dimalononitrile

2DQTT-i
Type Single Compound
Formula C44H45N5O2S5
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current on-off ratio dependent on synthesis annealing temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trichloro(octadecyl)-silane
  • Si/SiO2
  1. hUDePDs
  2. uymNWQ
Product

organic thin-film transistor

Size: not specified

Medium/Support: none

References

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