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PbSe nanocrystal thin film field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n+ silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

mercaptopropyl trimethoxysilane-treated Al2O3 film

Type Nano Material
Formula
Role gate dielectrics
4

thiocyanate-capped PbSe nanocrystal thin film

SCN--capped PbSe NC thin film
Type Nano Material
Formula
Role conducting channel
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
6

aluminium

aluminum
Type Single Compound
Formula Al
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. U6Snw3yNMN36sinZBuvo
Product

PbSe nanocrystal thin film field effect transistor

Size: not specified

Medium/Support: none

References

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