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germanium-based metal-oxide-semiconductor field-effect transistor

Based on

1 Patents
2013 Most recent source

Composition

1

germanium

Type
Formula Ge
Role
2

phosphorus ion

phosphorus
Type
Formula P1+
Role
3

dielectric structure

Type
Formula
Role
4

tantalum(III) nitride

tantalum nitride
Type
Formula NTa
Role
5

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • germanium
  • phosphorus ion
Product

germanium-based metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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