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PbSe nanowires-based n-type field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

PbSe nanowires

PbSe NW
Type
Formula
Role
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe nanowires-based n-type field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe nanowires-based n-type field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe nanowires-based n-type field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe nanowires-based n-type field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe nanowires-based n-type field-effect transistor

Size: not specified

Medium/Support: none

References

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