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long-channel InAs nanowire metal-oxide-semiconductor field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium arsenide nanowires

InAs nanowires
Type
Formula
Role
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
  1. aDuUrhizdpIOmcu4Q
Product

long-channel InAs nanowire metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. WoV93S89Sr5aLZmTO
Product

long-channel InAs nanowire metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
  1. QUYFbVUKPTYJn5u5P
Product

long-channel InAs nanowire metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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