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organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

phosphorus-doped silicon

n-type Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrichlorosilane moiety

trichloro(octadecyl)silane moiety octadecyltrimethoxysilane moiety octadecyl trichlorosilane moiety octadecyltrichlorosilane moiety n-octadecylsilanetriyl moiety octadecylsilanetriyl residue octadecylsilanetriyl group n-octadecylsilane moiety octadecylsilyl fragment octadecylsilane moiety octadecylsilyl moiety CH3-(CH2)17-Si- octadecylsilane octadecylsilyl ODTS moiety OTS residue OTS moiety ODS moiety OS moiety
Type
Formula -C18H37Si-
Role
4

6,6'-((4,4-dioctyl-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione)

SIDPP-OE
Type
Formula C84H114N4O4S6Si
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trichloro(octadecyl)-silane
  • Si/SiO2
Product

organic field-effect transistor

Size: not specified

Medium/Support: none

References

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