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InAs NW based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/silica

Type Complex Compound
Formula
Role substrate
2

InAs nanowires

InAs NW
Type Nano Material
Formula
Role channel layer
3

nickel/gold

Type Complex Compound
Formula
Role electrodes
4

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. LEZqQ0MrRNgZXTW2
  2. TyKvUPFbQS
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. 554ezqrkZWNdghDA
  2. grh1ejtJn6
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

References

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