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gallium telluride selenide-based photodiode

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped silicon

n-type silicon n-type Si silicon n-Si
Type
Formula Si
Role
2

gallium selenide telluride

Type
Formula GaTe0.51Se0.49
Role
3

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role anode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on laser power

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. jKqH65xdDSq
Product

gallium telluride selenide-based photodiode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. pMiksN1gRpn
Product

gallium telluride selenide-based photodiode

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. huOpiMgXt3X
Product

gallium telluride selenide-based photodiode

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. i4NZwYWXAni
Product

gallium telluride selenide-based photodiode

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. c7oCvpg8mVF
Product

gallium telluride selenide-based photodiode

Size: not specified

Medium/Support: none

References

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