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PbSe NW array-based complementary metal-oxide semiconductor inverter

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

oxygen/Pb-modified PbSe nanowires

oxygen/Pb-modified PbSe NW
Type
Formula
Role
5

gold

Type Single Compound
Formula Au
Role electrodes
6

PbSe nanowires

PbSe NW
Type
Formula
Role
7

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
circuit diagram

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe NW array-based complementary metal-oxide semiconductor inverter

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • aluminium oxide
  • n-doped Si/SiO2
Product

PbSe NW array-based complementary metal-oxide semiconductor inverter

Size: not specified

Medium/Support: none

References

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