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carbon nanotube-based field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

carbon nanotubes

CNT
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance per carbon nanotube

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. Jhpy7aevSR7ilEL35y55FWPT6
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. 6cknfbFs8ObckQq3g6M4a3dlH
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. 2Uks7a5Ffve1Ety1KVKy8NJ7T
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. emeIW3OwteHN4xYXpzm3xUlv1
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. mPtNSlqK6ql6Jlhvt8r46M4cZ
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

References

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