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carbon nanotube-based field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

tungsten

Type Single Compound
Formula W
Role gate
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
4

carbon nanotubes

CNT
Type Nano Material
Formula
Role channels
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role source
7

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. Uh9loh7QM8su2nMQsKcxanQG1
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. TdPBr6r5WubaywXb5w6JEOjLs
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. gHfTExErwFb7pVIJCNQxZYSw0
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. XDwHXFwTbw4ko6tANPEuXxwGM
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. qgmFLIQkxvBE6bFzsFcbIMWNW
Product

carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

References

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