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resistive random access memory device

Based on

1 Articles
2015 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes
2

pentacene

PEN Pen P5 Pc Pe
Type Single Compound
Formula C22H14
Role semiconductor layer
3

multilayer graphene

graphene film
Type Nano Material
Formula
Role electrodes
4

silicon dioxide

SiOx substrates silicic oxide fused quartz fused silica SiO2 glass silica
Type Single Compound
Formula SiO2
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current stability dependent on number of on-off cycles

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

resistive random access memory device

Size: not specified

Medium/Support: none

References

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