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back-gated carbon nanotubes cross-stacked array-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single-walled carbon nanotubes

single-walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role source
6

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
breakdown current dependent on junction type

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
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Product

back-gated carbon nanotubes cross-stacked array-based field-effect transistor

Size: not specified

Medium/Support: none

References

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